single igbt module 900 amperes/1700 volts QIS1790001 preliminary 1 description: powerex igbt modules are designed for use in switching applications. each module consists of one igbt transistor in a single configuration with a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: lo w drive power lo w v ce(sat) discrete super-fast recovery free-wheel diode isolat ed baseplate for easy heat sinking applications: a c motor control motion/ser vo control ups w elding power supplies laser p ower supplies outline drawing and circuit diagram dimensions inches millimeters n 0.69 17.5 p 0.79 20.0 q 0.51 13.0 r 0.43 11.0 s 0.43 11.0 t 0.35 9.0 u m8 metric m8 v 0.16 4.0 w 0.256 dia. 6.5 dia. x m4 metric m4 y 0.24 6.0 dimensions inches millimeters a 4.33 110.0 b 3.15 80.0 c 3.660.008 93.00.25 d 2.440.008 62.00.25 e 1.57 40.0 f 1.42 max. 36.0 max. g 1.14 29.0 h 1.00 max. 25.5 max. j 0.89 22.5 k 0.93 23.5 l 0.83 21.0 m 0.63 16.0 c e g e a m p b e q l g n j k f j h r v y d x (2 typ.) w (4 typ.) s t u (2 typ.) c note: all electrical characteristics scaled from 300a module cm300dx-34sa. 11/14 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
2 preliminary absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1700 v olts gate-emitter voltage (v ce = 0v) v ges 20 v olts collector current (dc, t c = tbdc) *2,*4 i c 900 amper es collector current (pulse, repetitive) *3 i crm 1 800 amper es total power dissipation (t c = 25c) *2,*4 p tot tbd watts emitter current (t c = tbdc) *2,*4 i e *1 900 amper es emitter current (pulse, repetitive) *3 i erm *1 1 800 amper es maximum junction temperature t j(max) 175 c maximum case temperature *2 t c(max) 125 c operating junction temperature t j(op) -40 t o +150 c storage temperature t stg -40 t o +125 c isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 3500 v olts *1 r epresent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. the heatsink ther mal resistance should be measured just under the chips. *3 p ulse width and repetition rate should be such that device junction temperature (t j ) does not e xceed t j(max) rating. *4 junction temperature (t j ) should not increase beyond maximum junction t emperature (t j(max) ) rating. QIS1790001 single igbt module 900 amperes/1700 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
3 preliminary electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 3 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 15 a gate-emitter threshold voltage v ge(th) i c = 90ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 900a, v ge = 15v, t j = 25c *6 2.0 2.5 volts i c = 900a, v ge = 15v, t j = 125c *6 2.2 volts i c = 900a, v ge = 15v, t j = 150c *6 2.25 volts input capacitance c ies 156 nf output capacitance c oes v ce = 10v, v ge = 0v 6.6 nf reverse transfer capacitance c res 1.56 nf gate charge q g v cc = 1000v, i c = 900a, v ge = 15v 4968 nc turn-on delay time t d(on) 400 ns rise time t r v cc = 1000v, i c = 900a, v ge = 15v, 1 00 ns turn-off delay time t d(off) r g = 0?, inductive load 700 ns fall time t f 600 ns emitter-collector voltage v ec *1 i e = 900a, v ge = 0v, t j = 25c *6 4.1 5.3 volts i e = 900a, v ge = 0v, t j = 125c *6 2.9 volts i e = 900a, v ge = 0v, t j = 150c *6 2.7 volts reverse recovery time t rr *1 v cc = 1000v, i e = 900a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load 42 c turn-on switching energy per pulse e on v cc = 1000v, i c = i e = 900a, 1 14 mj turn-off switching energy per pulse e off v ge = 15v, r g = 0?, 240 mj reverse recovery energy per pulse e rr *1 t j = 150c, inductive load 207 mj internal lead resistance r cc' + ee' main terminals-chip, tbd m? t c = 25c *2 internal gate resistance r g 0.56 ? *1 r epresent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. the heatsink ther mal resistance should be measured just under the chips. *6 p ulse width and repetition rate should be such as to cause negligible temperature rise. QIS1790001 single igbt module 900 amperes/1700 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
4 preliminary electrical characteristics, t j = 25c unless otherwise specifed (continued) thermal resistance characteristics characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case *2 r th(j-c) q per inverter igbt 1 8 k/kw thermal resistance, junction to case *2 r th(j-c) d per inverter fwdi 28 k/kw contact thermal resistance, r th(c-f) thermal grease applied 15 k/kw case to heatsink *2 mechanical characteristics mounting torque mounting to terminal , m8 screw 95 in-lb mounting to terminal, m4 screw 15 in-lb mounting to heatsink, m6 screw 40 in-lb creepage distance d s terminal to terminal tbd mm terminal to baseplate tbd mm clearance d a terminal to terminal tbd mm terminal to baseplate tbd mm weight m 600 grams flatness of baseplate e c on centerline x, y -1 00 +1 00 m recommended operating conditons, t a = 25c (dc) supply voltage v cc applied across c-e 1 000 1200 volts gate (-emitter drive) voltage v ge(on) applied across g-e 13.5 15.0 16.5 volts external gate resistance r g per switch 0 9 ? *2 c ase temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplat e and the heatsink side just under the chips. the heatsink ther mal resistance should be measured just under the chips. QIS1790001 single igbt module 900 amperes/1700 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5 preliminary 0 2 1 5 3 4 6 3x10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (chip - typical) 3x10 2 3x10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (chip - typical) 10 6 8 10 1412 16 18 20 8 6 4 2 0 t j = 25c i c = 1800a i c = 900a i c = 540a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (chip - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 15 9 8 t j = 25 c 1800 600 1200 300 900 1500 collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (chip - typical) 4.5 3.5 2.5 3.0 4.0 0 2.0 1.5 0.5 1.0 0 1800 600 1200 300 900 1500 v ge = 15v t j = 25c t j = 125c t j = 150c t j = 25c t j = 125c t j = 150c QIS1790001 single igbt module 900 amperes/1700 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
6 preliminary collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 3x10 3 3x10 2 3x10 1 3x10 -1 3x10 0 10 1 v ge = 0v c ies c oes c res 10 -1 collector current, i c , (amperes) 10 4 10 3 3x10 1 3x10 2 10 2 10 0 10 1 10 4 10 3 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 1000v v ge = 15v r g = 0 t j = 125c inductive load t f 3x10 3 collector current, i c , (amperes) 3x10 1 3x10 2 half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 1000v v ge = 15v r g = 0 t j = 150c inductive load t f 3x10 3 external gate resistance, r g , (?) 10 4 10 3 3.3 0.03 10 1 10 2 switching time, (ns) switching time, (ns) switching time vs. gate resistance (typical) v cc = 1000v v ge = 15v i c = 900a t j = 125c inductive load 33 0.33 t d(off) t d(on) t r t f QIS1790001 single igbt module 900 amperes/1700 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
7 preliminary gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge (typical) 20 0 15 10 5 0 1500 3000 4500 7500 6000 i c = 900a v cc = 1000v emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 3x10 1 3x10 2 10 2 10 1 3x10 3 v cc = 1000v v ge = 15v r g = 0 t j = 125c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 3x10 1 3x10 2 10 2 10 1 3x10 3 v cc = 1000v v ge = 15v r g = 0 t j = 150c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj) 3x10 3 3x10 2 3x10 1 3x10 0 half-bridge switching characteristics (typical) 3x10 1 3x10 2 3x10 3 v cc = 1000v v ge = 15v r g = 0 t j = 125c e on e off e rr 3x10 2 3x10 1 3x10 -1 3x10 0 reverse recivery energy, e rr , (mj) QIS1790001 single igbt module 900 amperes/1700 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
8 preliminary v cc = 1000v v ge = 15v r g = 0 t j = 150c switching energy, e on , e off , (mj) 3x10 3 3x10 2 3x10 1 3x10 0 3x10 2 3x10 1 3x10 -1 3x10 0 reverse recivery energy, e rr , (mj) collector current, i c , (amperes) emitter current, i e , (amperes) 3x10 1 3x10 2 3x10 3 half-bridge switching characteristics (typical) e on e off e rr time, (s) transient thermal impedance characteristics (typical) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 single pulse t c = 25c per unit base = r th(j-c) = 18 k/kw (igbt) r th(j-c) = 28 k/kw (fwdi) normalized transient thermal impedance, z th(j-c') z th = r th ? (normalized value) QIS1790001 single igbt module 900 amperes/1700 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 11/14 rev. 3 information presented is based upon manufacturers testing and projected capabilities. this information is subject to change without notice. the manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
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